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Proceedings Paper

Nonplanar GaAs/GaAIAs Lasers By Metalorganic Chemical Vapor Deposition
Author(s): R. D. Burnham; D. Fekete; D. R. Scifres; W. Streifer
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Paper Abstract

In this paper, we discuss the operation of a non-planar GaAs/GaA1As laser grown by metalorganic chemical vapor deposition. The non-planar structure is achieved by using a self-aligned masking technique. The masking causes lateral spatial variations to develop during the growth of the active and/or cladding regions. These lasers inherently have both lateral current confinement and lateral real refractive index waveguidance. Threshold currents of ≈40 mamps and differential quantum efficiencies of 32% are measured very reproducibly over a wafer.

Paper Details

Date Published: 28 July 1981
PDF: 3 pages
Proc. SPIE 0272, High Speed Photodetectors, (28 July 1981); doi: 10.1117/12.965696
Show Author Affiliations
R. D. Burnham, Xerox Palo Alto Research Centers (United States)
D. Fekete, Xerox Palo Alto Research Centers (United States)
D. R. Scifres, Xerox Palo Alto Research Centers (United States)
W. Streifer, Xerox Palo Alto Research Centers (United States)


Published in SPIE Proceedings Vol. 0272:
High Speed Photodetectors
Lou Tomasetta, Editor(s)

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