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Proceedings Paper

Use Of III-V Compounds For Integrated Optical Circuits
Author(s): James L. Merz
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Paper Abstract

Recent progress in the development of integrated optical circuits using the III-V compound semiconductors is reviewed. The application of double heterostructure configurations is emphasized, not only for optical sources, but also for detectors, with reference to both the A.GaAs/GaAs system and the InGaAsP quaternary. Devices utilizing periodic corrugations are described briefly, whereas alternate attempts to fabricate optical circuits by etching or sputtering techniques are discussed in more detail. Recent advances in processing techniques suitable for optical integration, such as reactive-ion etching, and the use of lasers or electron beams for device processing, are described.

Paper Details

Date Published: 28 July 1981
PDF: 8 pages
Proc. SPIE 0272, High Speed Photodetectors, (28 July 1981); doi: 10.1117/12.965695
Show Author Affiliations
James L. Merz, University of California Santa Barbara (United States)


Published in SPIE Proceedings Vol. 0272:
High Speed Photodetectors
Lou Tomasetta, Editor(s)

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