Share Email Print

Proceedings Paper

Recent Advances In InGaAsP/InP Phototransistors
Author(s): Kamal Tabatabaie-Alavi,; Clifton G. Fonstad
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

The sensitivities of three different detector/pre-amplifier configurations suitable as 1.3 pm optical fiber receivers -- a heterojunction bipolar phototransistor, a p-i-n photo-diode with a FET preamplifier, and an avalanche photodiode with a FET preamplifier -- are calculated and compared using recently published performance data. Use of a state-of-the-art low capacitance, high transconductance FET preamplifier promises to increase the sensitivity of a pin-FET receiver to the point that it is only 6-7 db less than that of a low noise, low leakage APD detector with the same FET preamplifier. Heterojunction phototran: sistors, however, have the simplest structure of any of the three receivers, are monolithic, and require the least amount of control circuitry, while having sensitivities comparable to those of the advanced pin-FET receivers.

Paper Details

Date Published: 28 July 1981
PDF: 5 pages
Proc. SPIE 0272, High Speed Photodetectors, (28 July 1981); doi: 10.1117/12.965690
Show Author Affiliations
Kamal Tabatabaie-Alavi,, Massachusetts Institute of Technology (United States)
Clifton G. Fonstad, Massachusetts Institute of Technology (United States)

Published in SPIE Proceedings Vol. 0272:
High Speed Photodetectors
Lou Tomasetta, Editor(s)

© SPIE. Terms of Use
Back to Top