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Proceedings Paper

In0.53Ga0.47As Field-Effect Transistor (FETs) And PIN-FETs
Author(s): R. E. Nahory; R. F. Leheny
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Paper Abstract

The transport properties of In0.53Ga0.47As indicate that this ternary material is a strong candidate for future FET's. Early results reported for FET's prepared from this material are reviewed and compared. The advantage of the JFET for fabrication of PIN-FET integrated optical receiver circuits is pointed out and updated results are presented for these devices. Transconductance values are presently 50 mS/mm, while work aimed at further reduction of gate dimensions is expected to yield even higher values.

Paper Details

Date Published: 28 July 1981
PDF: 6 pages
Proc. SPIE 0272, High Speed Photodetectors, (28 July 1981); doi: 10.1117/12.965689
Show Author Affiliations
R. E. Nahory, Bell Laboratories (United States)
R. F. Leheny, Bell Laboratories (United States)

Published in SPIE Proceedings Vol. 0272:
High Speed Photodetectors
Lou Tomasetta, Editor(s)

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