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Proceedings Paper

Epitaxial HgCdTe/CdTe Photodiodes For The 1 -3 Am Spectral Region
Author(s): S. H. Shin; J. G. Pasko; D. T. Cheung
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Paper Abstract

Hgi-xCdxTe epitaxial layers have been successfully grown in various compositions, for 1-3 μm applications. n+/p junctions are formed either by a standard B-implantation into as-grown p-type layers or by doubly grown p- and n-layers. The SWIR HgCdTe photodiodes exhibit quantum efficiencies of 55-65% without AR coating. For the diodes with 1.39 μm cut-off at room temperature, the zero bias detector resistance-area (RoA) product is 4 x 10 4 Ω-cm2, and the dark current density is ~ 1 x 10 -4 A/cm2 at half-breakdown voltage. The same values of ~ 104 Ω-cm2 RoA products have also been measured for 2.4 μm cut-off photodiodes at 195K. The energy gap and temperature dependence of RoA product is in excellent agreement with the bulk limited generation-recombination model. The breakdown voltages of SWIR diodes vary from 12 volts to greater than 130 volts, depending on the Cd composition (x) and base carrier concentrations.

Paper Details

Date Published: 28 July 1981
PDF: 5 pages
Proc. SPIE 0272, High Speed Photodetectors, (28 July 1981); doi: 10.1117/12.965688
Show Author Affiliations
S. H. Shin, Rockwell International Science Center (United States)
J. G. Pasko, Rockwell International Science Center (United States)
D. T. Cheung, Rockwell International Science Center (United States)

Published in SPIE Proceedings Vol. 0272:
High Speed Photodetectors
Lou Tomasetta, Editor(s)

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