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Proceedings Paper

GaAIAsSb/GaSb Avalanche Photodetectors
Author(s): Raymond Chin; H. D. Law; K. Nakano
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Paper Abstract

The growth and fabrication of GaAlAsSb/GaSb avalanche photodiodes is discussed. The leakage current, gain, and uniformity of heterojunction, ion-implanted and Schottky-barrier structures are examined. In addition, the effect of the valence band spin orbit splitting upon avalanche noise is briefly discussed. It is shown that the prevalent problem of these devices is a high surface leakage current.

Paper Details

Date Published: 28 July 1981
PDF: 6 pages
Proc. SPIE 0272, High Speed Photodetectors, (28 July 1981); doi: 10.1117/12.965685
Show Author Affiliations
Raymond Chin, Rockwell International (United States)
H. D. Law, Rockwell International (United States)
K. Nakano, Rockwell International (United States)


Published in SPIE Proceedings Vol. 0272:
High Speed Photodetectors
Lou Tomasetta, Editor(s)

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