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Systematic study of source mask optimization and verification flows
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Paper Abstract

Source mask optimization (SMO) emerged as powerful resolution enhancement technique (RET) for advanced technology nodes. However, there is a plethora of flow and verification metrics in the field, confounding the end user of the technique. Systemic study of different flows and the possible unification thereof is missing. This contribution is intended to reveal the pros and cons of different SMO approaches and verification metrics, understand the commonality and difference, and provide a generic guideline for RET selection via SMO. The paper discusses 3 different type of variations commonly arise in SMO, namely pattern preparation and selection, availability of relevant OPC recipe for freeform source and finally the metrics used in source verification. Several pattern selection algorithms are compared and advantages of systematic pattern selection algorithms are discussed. In the absence of a full resist model for SMO, alternative SMO flow without full resist model is reviewed. Preferred verification flow with quality metrics of DOF and MEEF is examined.

Paper Details

Date Published: 30 June 2012
PDF: 8 pages
Proc. SPIE 8441, Photomask and Next-Generation Lithography Mask Technology XIX, 84410U (30 June 2012); doi: 10.1117/12.965565
Show Author Affiliations
Yu Ben, GLOBALFOUNDRIES (United States)
Azat Latypov, GLOBALFOUNDRIES (United States)
Gek Soon Chua, GLOBALFOUNDRIES (United States)
Yi Zou, GLOBALFOUNDRIES (United States)

Published in SPIE Proceedings Vol. 8441:
Photomask and Next-Generation Lithography Mask Technology XIX
Kokoro Kato, Editor(s)

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