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Proceedings Paper

Advanced module for model parameter extraction using global optimization and sensitivity analysis for electron beam proximity effect correction
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Paper Abstract

In electron proximity effect correction (PEC), the quality of a correction is highly dependent on the quality of the model. Therefore it is of primary importance to have a reliable methodology to extract the parameters and assess the quality of a model. Among others the model describes how the energy of the electrons spreads out in the target material (via the Point Spread Function, PSF) as well as the influence of the resist process. There are different models available in previous studies, as well as several different approaches to obtain the appropriate value for their parameters. However, those are restricted in terms of complexity, or require a prohibitive number of measurements, which is limited for a certain PSF model. In this work, we propose a straightforward approach to obtain the value of parameters of a PSF. The methodology is general enough to apply for more sophisticated models as well. It focused on improving the three steps of model calibration procedure: First, it is using a good set of calibration patterns. Secondly, it secures the optimization step and avoids falling into a local optimum. And finally the developed method provides an improved analysis of the calibration step, which allows quantifying the quality of the model as well as enabling a comparison of different models. The methodology described in the paper is implemented as specific module in a commercial tool.

Paper Details

Date Published: 8 November 2012
PDF: 11 pages
Proc. SPIE 8522, Photomask Technology 2012, 852212 (8 November 2012); doi: 10.1117/12.965312
Show Author Affiliations
Thiago Figueiro, ASELTA Nanographics (France)
CNRS/UJF-Grenoble1/CEA LTM (France)
Kang-Hoon Choi, Fraunhofer Ctr. Nanoelectronic Technologies (Germany)
Manuela Gutsch, Fraunhofer Ctr. Nanoelectronic Technologies (Germany)
Martin Freitag, Fraunhofer Ctr. Nanoelectronic Technologies (Germany)
Christoph Hohle, Fraunhofer Ctr. Nanoelectronic Technologies (Germany)
Jean-Hervé Tortai, CNRS/UJF-Grenoble1/CEA LTM (France)
Mohamed Saib, ASELTA Nanographics (France)
Patrick Schiavone, ASELTA Nanographics (France)


Published in SPIE Proceedings Vol. 8522:
Photomask Technology 2012
Frank E. Abboud; Thomas B. Faure, Editor(s)

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