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Proceedings Paper

Choosing the data flow paradigm for EUV mask process corrections
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Paper Abstract

When compared to conventional chrome absorber masks, electron beam patterning of EUV masks requires additional corrections to account for electron backscattering from the mirror and tantalum (Ta) based absorber layers. Current ebeam systems cannot correct for these additional backscattering effects with in-tool proximity effect correction (PEC) algorithms. Hence new methods of correction are needed, which require an implementation of the correction into the mask writer data prior to exposure. Where these corrections should be performed in the data flow between mask user and mask supplier, and who should calibrate and maintain the corrections is not clear. We present various approaches for model calibration as well as discuss the possible options for inserting mask process correction (MPC) into the mask process landscape. We report on an attempt to calibrate a correction for EUV masks using actual CD data, and an e-beam backscattering model. The resulting Point Spread Functions (PSF) were used to simulate and predict the measured CD data. We also explored the robustness of these models by varying the writing tool and mask blank characteristics. We conclude by recommending an appropriate flow for calibration and use of mask process correction and ownership of the model calibration, maintenance and the data correction processes.

Paper Details

Date Published: 8 November 2012
PDF: 8 pages
Proc. SPIE 8522, Photomask Technology 2012, 85220Y (8 November 2012); doi: 10.1117/12.965225
Show Author Affiliations
Christian Bürgel, Advanced Mask Technology Ctr. (Germany)
Keith Standiford, GLOBALFOUNDRIES (United States)
Gek Soon Chua, GLOBALFOUNDRIES Singapore (Singapore)


Published in SPIE Proceedings Vol. 8522:
Photomask Technology 2012
Frank E. Abboud; Thomas B. Faure, Editor(s)

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