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Proceedings Paper

Monolithic Integration Of Si And GaAs Devices
Author(s): H. K. Choi; G. W. Turner; T. H. Windhorn; B-Y. Tsaur
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Paper Abstract

Integration of Si MOSFETs with GaAs MESFETs and with GaAs/AlGaAs double-heterostructure LEDs on mono-lithic GaAs/Si substrates is reviewed. Both Si MOSFETs and GaAs MESFETs show characteristics comparable to those for devices fabricated on separate Si and GaAs substrates. In LED/MOSFET integration, the cathode of each LED is connected with the drain of a MOSFET. LED modulation rates up to 27 Mbps have been achieved by applying a stream of voltage pulses to the MOSFET gate.

Paper Details

Date Published: 17 February 1987
PDF: 8 pages
Proc. SPIE 0703, Integration and Packaging of Optoelectronic Devices, (17 February 1987); doi: 10.1117/12.965201
Show Author Affiliations
H. K. Choi, Massachusetts Institute of Technology (United States)
G. W. Turner, Massachusetts Institute of Technology (United States)
T. H. Windhorn, Massachusetts Institute of Technology (United States)
B-Y. Tsaur, Massachusetts Institute of Technology (United States)


Published in SPIE Proceedings Vol. 0703:
Integration and Packaging of Optoelectronic Devices
Davis H. Hartman; Robert L. Holman; Doyle P. Skinner, Editor(s)

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