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Proceedings Paper

Optical Waveguides And Surface Emitters In III-V Semiconductors
Author(s): J. M. Hammer
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Paper Abstract

Recent work on grating-surface-emitting diode lasers has resulted in the production of lasers which have very narrow farfields (far field angles 0.25°x6°) and dynamically-stable-single-wavelength operation. These lasers use a distributed-Bagg-reflecting (DBR) grating to act as at least one of the reflectors required to complete the laser cavity. A second order grating with period of aproximately 2400 Å is used. The grating is connected to the laser-gain section through a thin-film planar or rectangular cross-section optical waveguide which is incorporated in the gain section as a large-optical-cavity and continues through a taper-transition section to the DBR section. Thus, light is launched into an optical waveguide as part of the intrinsic structure of the grating-surface-emitting laser (GSEL).

Paper Details

Date Published: 17 February 1987
PDF: 2 pages
Proc. SPIE 0703, Integration and Packaging of Optoelectronic Devices, (17 February 1987); doi: 10.1117/12.965199
Show Author Affiliations
J. M. Hammer, RCA Laboratories (United States)

Published in SPIE Proceedings Vol. 0703:
Integration and Packaging of Optoelectronic Devices
Davis H. Hartman; Robert L. Holman; Doyle P. Skinner, Editor(s)

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