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Proceedings Paper

Plasma Treatment of High Tc Thin Films for Monolithic Superconducting Devices
Author(s): K. Gotoh; A. Yoshida; H. Tamura; S. Morohashi; N. Fujimaki; S. Hasuo
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Paper Abstract

We studied plasma treatment for application to high Tc superconducting devices. The electrical and physical properties of high Tc thin films can be modified by Ar plasma treatment. The Ar plasma irradiated films showed super-normal transition. We confirmed by X-ray photoelectron spectroscopy that Ar plasma treatment changed Cu valence of high Tc films significantly. We tried to fabricate super-normal-super (S-N-S) structures from high Tc thin films using selective Ar plasma treatment.

Paper Details

Date Published: 19 March 1990
PDF: 5 pages
Proc. SPIE 1187, Processing of Films for High Tc Superconducting Electronics, (19 March 1990); doi: 10.1117/12.965167
Show Author Affiliations
K. Gotoh, Fujitsu Limited (Japan)
A. Yoshida, Fujitsu Limited (Japan)
H. Tamura, Fujitsu Limited (Japan)
S. Morohashi, Fujitsu Limited (Japan)
N. Fujimaki, Fujitsu Limited (Japan)
S. Hasuo, Fujitsu Limited (Japan)

Published in SPIE Proceedings Vol. 1187:
Processing of Films for High Tc Superconducting Electronics
T. Venkatesan, Editor(s)

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