Share Email Print

Proceedings Paper

Preparation And Characterization Of Pulsed Laser Deposited HTSC Films
Author(s): L. Schultz; B. Roas; P. Schmitt; G. Endres
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

High Tc superconductor films were prepared by laser deposition. Epitaxial YBaCuO films with high critical current density are obtained for a uniform laser beam energy density of about 4 J/cm2, a substrate temperature above 730°C and an oxygen pressure of 0.3 to 0.5 mbar. Using identical parameters, LaA103 interlayers grow epitaxially on the YBaCuO films and can therefore be used as insulating layers in multi-layer structures. For the Bi(Pb)SrCaCuO system, both the 80 K and the 110 K phase can be prepared in-situ with inductively measured 111's of 77 K and 80 K, respectively. A subsequent annealing step improves these values. For the 110 K phase a Tc(R = 0) of 98 K was obtained. Whereas the critical current densities in the Bi(Pb)SrCaCuO films must still be improved, the epitaxial YBaCuO films show high critical current densities as 5 x 106 A/cm2 at 77 K and zero field or 5 x 107 A/cm2 at 4.2 K and 7 T (for the magnetic field in the film plane). The critical current densities are affected by defects introduced by ion irradiation.

Paper Details

Date Published: 19 March 1990
PDF: 12 pages
Proc. SPIE 1187, Processing of Films for High Tc Superconducting Electronics, (19 March 1990); doi: 10.1117/12.965161
Show Author Affiliations
L. Schultz, Siemens AG (Germany)
B. Roas, Siemens AG (Germany)
P. Schmitt, Siemens AG (Germany)
G. Endres, Siemens AG (Germany)

Published in SPIE Proceedings Vol. 1187:
Processing of Films for High Tc Superconducting Electronics
T. Venkatesan, Editor(s)

© SPIE. Terms of Use
Back to Top