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Proceedings Paper

A Review of Metalorganic Chemical Vapor Deposition of High-Temperature
Author(s): A. Erbil; K. Zhang; B. S. Kwak; E. P. Boyd
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Paper Abstract

A status report is given on the metalorganic chemical vapor deposition (MOCVD) of high-temperature superconducting thin films. The advantages of MOCVD processing manifest themselves in the quality of the films produced, and in the economy of the process. Metalorganic precursor requirements, deposition parameters and film properties are discussed. Also difficulties have been identified in making MOCVD a manufacturing technology. To solve these problems, future research directions are proposed.

Paper Details

Date Published: 19 March 1990
PDF: 11 pages
Proc. SPIE 1187, Processing of Films for High Tc Superconducting Electronics, (19 March 1990); doi: 10.1117/12.965153
Show Author Affiliations
A. Erbil, Georgia Institute of Technology (United States)
K. Zhang, Georgia Institute of Technology (United States)
B. S. Kwak, Georgia Institute of Technology (United States)
E. P. Boyd, Georgia Institute of Technology (United States)


Published in SPIE Proceedings Vol. 1187:
Processing of Films for High Tc Superconducting Electronics
T. Venkatesan, Editor(s)

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