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Proceedings Paper

Epitaxial and As-Grown Preparation of Ba2YCu3Ox Thin Films on Si with Epitaxially Grown ZrO2 as a Buffer Layer
Author(s): Hiroaki Myoren; Yukio Osaka; Yukio Nishiyama; Naokazu Miyamoto; Hirofumi Fukumoto; Hiroyuki Nasu; Toshihiko Hamasaki
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Paper Abstract

High-Tc superconducting Ba2YCu3Ox thin films have been epitaxially grown on Si(100) substrates with the epitaxially grown Zr02 or yttria-stabilized zirconia (YSZ) as a buffer layer. The thin films were prepared by rf magnetron sputtering of the stoichiometric Ba2YCu30x target below 700°C. An adequate positive substrate bias was necessary to ensure surface smoothness and to show the superconducting transition above liquid nitrogen temperature without any post-treatment. The highest Tc(onset) and Tc(end) observed were 88K and 84K, respectively. The critical current density was Mx105A/cm2 at 50K. Using the silicon substrates patterned with the trench, the superconducting microbridge junction has been fabricated in as-grown Ba2YCu3Ox thin films by rf-magnetron sputtering. The microbridge junctions with constrictions as small as submicron dimension were obtained. These microbridge junctions behaved as Josephson junction and were observed microwave-induced steps. Based on Likharev's theory, it is suggested that these devices show Josephson effect in the Abrikosov vortex motion region.

Paper Details

Date Published: 19 March 1990
PDF: 10 pages
Proc. SPIE 1187, Processing of Films for High Tc Superconducting Electronics, (19 March 1990); doi: 10.1117/12.965148
Show Author Affiliations
Hiroaki Myoren, Hiroshima University (Japan)
Yukio Osaka, Hiroshima University (Japan)
Yukio Nishiyama, Hiroshima University (Japan)
Naokazu Miyamoto, Hiroshima University (Japan)
Hirofumi Fukumoto, Hiroshima University (Japan)
Hiroyuki Nasu, Mie University (Japan)
Toshihiko Hamasaki, Toshiba Corporation (Japan)


Published in SPIE Proceedings Vol. 1187:
Processing of Films for High Tc Superconducting Electronics
T. Venkatesan, Editor(s)

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