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Proceedings Paper

Silicon Optoelectronic Components Behaviour Under Pulsed Gamma Irradiation.
Author(s): S Ravary; F Pupat
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Paper Abstract

The radiation sensitivity of several silicon optoelectronic sensors (photodiodes, linear arrays, CCD) has been measured under pulsed gamma irradiation. The transient effects are presented as a function of both dose and dose rate .

Paper Details

Date Published: 8 June 1988
PDF: 5 pages
Proc. SPIE 0867, Optical Devices in Adverse Environments, (8 June 1988); doi: 10.1117/12.965070
Show Author Affiliations
S Ravary, Commissariat a l'energie atomique (France)
F Pupat, Commissariat a l'energie atomique (France)


Published in SPIE Proceedings Vol. 0867:
Optical Devices in Adverse Environments
Roger A. Greenwell, Editor(s)

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