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Proceedings Paper

Plasma X-Ray Sources For Lithography Generated By A 0.5 J KrF Laser
Author(s): F O'Neill; G M Davis; M C Gower; I C E Turcu; M Lawless; M Williams
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Paper Abstract

Laser-plasma X-ray sources suitable for lithography with silicon-substrate masks are generated by focusing 2a low energy, repetitive, commercial KrF laser onto targets at irradiances 101N/cm2. Conversion efficiency to X-rays at hv m 1 keV has been measured as a function of target irradiance and target atomic number. The best quantitatively measured conversion efficiency of 0.3% is obtained using a Ni target (Z = 28). A repetitive (2Hz) Ag target X-ray source is used to demonstrate microlithography by printing 0.5 pm lines and spaces into EBR-9 resist.

Paper Details

Date Published: 4 February 1988
PDF: 7 pages
Proc. SPIE 0831, X-Rays from Laser Plasmas, (4 February 1988); doi: 10.1117/12.965042
Show Author Affiliations
F O'Neill, SERC Rutherford Appleton Laboratory (United Kingdom)
G M Davis, SERC Rutherford Appleton Laboratory (United Kingdom)
M C Gower, SERC Rutherford Appleton Laboratory (United Kingdom)
I C E Turcu, SERC Rutherford Appleton Laboratory (United Kingdom)
M Lawless, SERC Rutherford Appleton Laboratory (United Kingdom)
M Williams, SERC Rutherford Appleton Laboratory (United Kingdom)


Published in SPIE Proceedings Vol. 0831:
X-Rays from Laser Plasmas
Martin C. Richardson, Editor(s)

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