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Proceedings Paper

Photomask quality evaluation using lithography simulation and precision SEM image contour data
Author(s): Tsutomu Murakawa; Naoki Fukuda; Soichi Shida; Toshimichi Iwai; Jun Matsumoto; Takayuki Nakamura; Kazuyuki Hagiwara; Shohei Matsushita; Daisuke Hara; Anthony Adamov
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Paper Abstract

To evaluate photomask quality, the current method uses spatial imaging by optical inspection tools. This technique at 1Xnm node has a resolution limit because small defects will be difficult to extract. To simulate the mask error-enhancement factor (MEEF) influence for aggressive OPC in 1Xnm node, wide FOV contour data and tone information are derived from high precision SEM images. For this purpose we have developed a new contour data extraction algorithm with sub-nanometer accuracy resulting in a wide Field of View (FOV) SEM image: (for example, more than 10um x 10um square). We evaluated MEEF influence of high-end photomask pattern using the wide FOV contour data of "E3630 MVM-SEMTM" and lithography simulator "TrueMaskTM DS" of D2S, Inc. As a result, we can detect the "invisible defect" as the MEEF influence using the wide FOV contour data and lithography simulator.

Paper Details

Date Published: 8 November 2012
PDF: 10 pages
Proc. SPIE 8522, Photomask Technology 2012, 852226 (8 November 2012); doi: 10.1117/12.964994
Show Author Affiliations
Tsutomu Murakawa, Advantest Corp. (Japan)
Naoki Fukuda, Advantest Corp. (Japan)
Soichi Shida, Advantest Corp. (Japan)
Toshimichi Iwai, Advantest Corp. (Japan)
Jun Matsumoto, Advantest Corp. (Japan)
Takayuki Nakamura, Advantest Corp. (Japan)
Kazuyuki Hagiwara, D2S K.K. (Japan)
Shohei Matsushita, D2S K.K. (Japan)
Daisuke Hara, D2S K.K. (Japan)
Anthony Adamov, D2S, Inc. (United States)


Published in SPIE Proceedings Vol. 8522:
Photomask Technology 2012
Frank E. Abboud; Thomas B. Faure, Editor(s)

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