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Proceedings Paper

Measurements on a Proposed Short Wavelength Laser System in Xenon III
Author(s): H. C. Kapteyn; M. M. Murnane; R. W. Falcone; G. Kolbe; R. W. Lee
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Paper Abstract

Measurements on a proposed short wavelength laser system at 108.9 nm in doubly ionized Xenon are reported. Previous electron spectroscopy data indicate that a population inversion should be created between the Xe III states 5s0 5p6 1S0 and 5s0 5p6 1P1 due to selective Auger decay following photoionization of a 4d electron from the neutral atom. Using a high repetition rate laser produced plasma x-ray source and time correlated photon counting, we measured the lifetime of the 1S0 upper state to be 4.75 ±0.15 nsec with a collisional quenching rate of 2.8±0.2x107 (torr-sec)-1. We also determined the Auger branching ratio into the upper and lower states by measuring fluorescence intensities. Implementation of this laser scheme is discussed including limitations in photopumping short wavelength lasers due to amplified spontaneous emission.

Paper Details

Date Published: 9 April 1987
PDF: 7 pages
Proc. SPIE 0688, Multilayer Structures & Laboratory X-Ray Laser Research, (9 April 1987); doi: 10.1117/12.964822
Show Author Affiliations
H. C. Kapteyn, University of California (United States)
M. M. Murnane, University of California (United States)
R. W. Falcone, University of California (United States)
G. Kolbe, Lawrence Livermore National Laboratory (United States)
R. W. Lee, Lawrence Livermore National Laboratory (United States)


Published in SPIE Proceedings Vol. 0688:
Multilayer Structures & Laboratory X-Ray Laser Research
Natale M. Ceglio; Pierre Dhez, Editor(s)

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