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Proceedings Paper

A Nondestructive Technique For Preprocessing Semiconductor Material
Author(s): G. A. Tanton; C. G. Walker; J. A. Grisham; Syed Razi
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Paper Abstract

New applications of advanced semiconductor materials, as for example in two-color missile seekers or focal plane arrays generate a need for faster, more detailed material characterization at the wafer level. Conventional contact bonding methods are severely limited in this respect, especially in high production rate situations. A cost effective technique that seeks to satisfy this need is presented here together with results of a feasibility investigation using wafers of very high quality single crystal CdS, an advanced detector material for the STINGER-POST air defense missile. These results indicate that Faraday Rotation (FR) could be used initially as the first step in screening wafers, and could potentially become the preferred method of characterization.

Paper Details

Date Published: 26 December 1984
PDF: 7 pages
Proc. SPIE 0505, Advances in Optical Materials, (26 December 1984); doi: 10.1117/12.964650
Show Author Affiliations
G. A. Tanton, U.S.Army Missile Command (United States)
C. G. Walker, U. S. Army Missile Command (United States)
J. A. Grisham, U. S. Army Missile Command (United States)
Syed Razi, General Dynamics (United States)


Published in SPIE Proceedings Vol. 0505:
Advances in Optical Materials
Solomon Musikant, Editor(s)

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