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Proceedings Paper

Growth Of Large-Diameter Crystals By Hem Tmfor Optical And Laser Applications
Author(s): C. P. Khattak; F. Schmid
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Paper Abstract

The Heat Exchanger Method (HEM), a new crystal growth process, is in commercial production for 20 cm diameter sapphire crystals and 40 cm diameter silicon ingots for optical applications. The simplicity of the HEM combined with a very high degree of control of the submerged, solid-liquid interface allows growth of high-quality crystals. The HEM is also being adapted for the growth of Co:MgF2, Ti:A1203 and Cr:A1203 crystals for laser applications.

Paper Details

Date Published: 26 December 1984
PDF: 5 pages
Proc. SPIE 0505, Advances in Optical Materials, (26 December 1984); doi: 10.1117/12.964616
Show Author Affiliations
C. P. Khattak, Crystal Systems, Inc. (United States)
F. Schmid, Crystal Systems, Inc. (United States)


Published in SPIE Proceedings Vol. 0505:
Advances in Optical Materials
Solomon Musikant, Editor(s)

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