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Proceedings Paper

Interplay of three-dimensional profile change and CD variation in 193-nm advanced binary photomasks
Author(s): Yun-Yue Lin; Sean Su; Wen-Chang Hsush; Ta-Cheng Lien; Jia-Jen Chen; Shin-Chang Lee; Anthony Yen
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Paper Abstract

In this study, the relationship between the depth profile of features and critical dimension (CD) deviation on MoSi binary photomasks is comprehensively investigated using 3D atomic force microscopy (3D-AFM) and aerial image metrology system (AIMS). Detailed profile description based on various surface analysis techniques, was performed to reconstruct the profile at various stages of the mask fabrication process. It is found that profile change and sidewall byproduct formation are strongly correlated with the etching environment, wet cleaning, and post-treatment. These process-induced profile changes subsequently lead to wafer CD change which can be verified by deviation in AIMS and CDSEM measurements. Visualization of these 3D profile and morphology change clearly reveals that etching gas control forms an outer layer, to enhance etch selectivity, film strength, and immunity to the mask cleaning process. Our finding provides a direction for optimizing advanced photomask materials and processing.

Paper Details

Date Published: 30 June 2012
PDF: 7 pages
Proc. SPIE 8441, Photomask and Next-Generation Lithography Mask Technology XIX, 844102 (30 June 2012); doi: 10.1117/12.964411
Show Author Affiliations
Yun-Yue Lin, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Sean Su, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Wen-Chang Hsush, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Ta-Cheng Lien, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Jia-Jen Chen, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Shin-Chang Lee, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Anthony Yen, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)


Published in SPIE Proceedings Vol. 8441:
Photomask and Next-Generation Lithography Mask Technology XIX
Kokoro Kato, Editor(s)

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