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Proceedings Paper

Proximity effect correction optimizing image quality and writing time for an electron multi-beam mask writer
Author(s): T. Klimpel; J. Klikovits; R. Zimmermann; M. Schulz; Alex Zepka; H.-J. Stock
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Paper Abstract

Electron multi-beam mask writers address the challenge of long mask write times for increasingly complex masks. The writing speed of the IMS multi-beam mask writer under consideration here depends on the data path and blanking device speed provided for exposing the patterns. It was initially believed that the maximum dose required for exposing the patterns could also be a limiting factor. We present a proximity effect correction scheme that improves image quality (compared to a dose-only correction) and allows for a maximum dose limit. We test this scheme with and without maximum dose limit, and compare the achieved image quality against that for a dose-only correction. The results of this simulation study are verified by comparing top down SEM images of resist structures from exposures using the different corrections.

Paper Details

Date Published: 8 November 2012
PDF: 7 pages
Proc. SPIE 8522, Photomask Technology 2012, 852229 (8 November 2012); doi: 10.1117/12.964405
Show Author Affiliations
T. Klimpel, Synopsys GmbH (Germany)
J. Klikovits, IMS Nanofabrication AG (Austria)
R. Zimmermann, Synopsys GmbH (Germany)
M. Schulz, Synopsys GmbH (Germany)
Alex Zepka, Synopsys, Inc. (United States)
H.-J. Stock, Synopsys GmbH (Germany)

Published in SPIE Proceedings Vol. 8522:
Photomask Technology 2012
Frank E. Abboud; Thomas B. Faure, Editor(s)

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