Share Email Print

Proceedings Paper

New CDSEM technology and its performance for multiple patterning process
Author(s): Yuta Chihara; Keisuke Ito; Masayuki Kuribara; Toshimichi Iwai; Soichi Shida; Masahiro Seyama; Jun Matsumoto; Takayuki Nakamura
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

As an alternative to EUV lithography, ArF immersion multiple patterning lithography has been heavily employed in semiconductor fabrication. This situation has led to increase use of bright-field photomasks with floating small patterns. Latest CDSEMs are equipped with various charge compensation features and applicable for devices with conductive and insulating material. However, there remain some difficulties when floating small patterns are to be measured. One of the specific examples is a floating dot on a via mask, dimension of which is around 200nm at the 45 nm process node, scaling down to 100nm at the 22nm process node. Since the dot has very small capacitance, it is easily charged by electron beam irradiation, and discharged in a short period. This kind of temporary voltage variation can affect the secondary electron yield, causes degradation of the SEM image contrast. We have analyzed that the "edge effect", which is the principle of SEM, has a primary role in small dot charging, and interchanging of scan line effectively suppresses the voltage variation. Based on this concept, we have developed a new scan technology for our "Multi Vision Metrology SEM" E3630, and improved the performance of image-based measurement. In this paper, the new scan technology and evaluation results are presented.

Paper Details

Date Published: 29 June 2012
PDF: 8 pages
Proc. SPIE 8441, Photomask and Next-Generation Lithography Mask Technology XIX, 844109 (29 June 2012); doi: 10.1117/12.964404
Show Author Affiliations
Yuta Chihara, Advantest Corp. (Japan)
Keisuke Ito, Advantest Corp. (Japan)
Masayuki Kuribara, Advantest Corp. (Japan)
Toshimichi Iwai, Advantest Corp. (Japan)
Soichi Shida, Advantest Corp. (Japan)
Masahiro Seyama, Advantest Corp. (Japan)
Jun Matsumoto, Advantest Corp. (Japan)
Takayuki Nakamura, Advantest Corp. (Japan)

Published in SPIE Proceedings Vol. 8441:
Photomask and Next-Generation Lithography Mask Technology XIX
Kokoro Kato, Editor(s)

© SPIE. Terms of Use
Back to Top