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Proceedings Paper

Efficient simulation of EUV multilayer defects with rigorous data base approach
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Paper Abstract

This paper presents the extension of the well-established rigorous electromagnetic field (EMF) solver Waveguide for the efficient and fully rigorous simulation of patterned extreme ultraviolet (EUV) masks with multilayer defects using a rigorously computed multilayer defect data base combined with on demand computed absorber structures. Typical computation times are in the range of seconds up to a few minutes. The new simulation approach will be presented. Selected simulation examples and a defect repair example demonstrate the functionality and the capability to perform fast, highly accurate and flexible EUV multilayer defect computations.

Paper Details

Date Published: 8 November 2012
PDF: 12 pages
Proc. SPIE 8522, Photomask Technology 2012, 85221S (8 November 2012); doi: 10.1117/12.964282
Show Author Affiliations
Peter Evanschitzky, Fraunhofer-Institut für Integrierte System und Bauelementetechnologie (Germany)
Feng Shao, Fraunhofer-Institut für Integrierte System und Bauelementetechnologie (Germany)
Andreas Erdmann, Fraunhofer-Institut für Integrierte System und Bauelementetechnologie (Germany)


Published in SPIE Proceedings Vol. 8522:
Photomask Technology 2012
Frank E. Abboud; Thomas B. Faure, Editor(s)

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