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Proceedings Paper

Effect of Er doping on the electronic structure and optical properties of ZnO
Author(s): Qian Xiang; Zhihua Xiong; Lanli Chen; Ying Jiang
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Paper Abstract

ZnO has a significant advantage for applications in optical devices. Especially ZnO doped with the rare earths (RE) shows great electronic and optical properties. Based on the density functional theory, using the first-principles calculations method, the crystal structure, electronic structure and optical properties of ZnO doped with various concentrations of Er were investigated. The calculated results show that with the increase of concentrations of Er, the volume of ZnO system is expanded. Simultaneously, the band gap of ZnO with dopant system becomes broad. However, the conductivity of system is enhanced with the decrease of Er concentration. On the other hand, imaginary part of the dielectric function of ZnO doped with Er also changes certainly. A new peak is observed in the low energy region. The results are helpful to gain a systematic understanding of geometrical structures, electrical structures and optical properties of Er-doped ZnO.

Paper Details

Date Published: 15 October 2012
PDF: 5 pages
Proc. SPIE 8418, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design, Manufacturing, and Testing of Smart Structures, Micro- and Nano-Optical Devices, and Systems, 84181G (15 October 2012); doi: 10.1117/12.964100
Show Author Affiliations
Qian Xiang, Jiangxi Science and Technology Normal Univ. (China)
Zhihua Xiong, Jiangxi Science and Technology Normal Univ. (China)
Lanli Chen, Jiangxi Science and Technology Normal Univ. (China)
Huangshi Polytechnic College (China)
Ying Jiang, Jiangxi Science and Technology Normal Univ. (China)


Published in SPIE Proceedings Vol. 8418:
6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Design, Manufacturing, and Testing of Smart Structures, Micro- and Nano-Optical Devices, and Systems
Tianchun Ye; Song Hu; Yanqiu Li; Xiangang Luo; Xiaoyi Bao, Editor(s)

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