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Proceedings Paper

Electro-Optical Properties Of III-V Compound Semiconductors For Spatial Light Modulation Applications
Author(s): William S. C. Chang; H. H. Wieder; T. E. Van Eck; A. L. Kellner; P. Chu
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Paper Abstract

Electroabsorption and electrorefraction properties of bulk and multiple quantum well structures made fr III-V compound semiconductor materials are discussed in this paper. The large electroabsorption that has already been observed is suitable for spatial light modulation. The potential advantages for using these structures for spatial light modulation include high speed of response and monolithic integration with detectors and electronic devices on the same chip. Variations of the electro-optical properties such as absorption wavelength birefringence. nonlinearity and speed of response as a function of structural

Paper Details

Date Published: 13 February 1986
PDF: 8 pages
Proc. SPIE 0634, Optical and Hybrid Computing, (13 February 1986); doi: 10.1117/12.964025
Show Author Affiliations
William S. C. Chang, University of California (United States)
H. H. Wieder, University of California (United States)
T. E. Van Eck, University of California (United States)
A. L. Kellner, University of California (United States)
P. Chu, University of California (United States)


Published in SPIE Proceedings Vol. 0634:
Optical and Hybrid Computing
Harold H. Szu, Editor(s)

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