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Proceedings Paper

An Excimer Laser-Based Aluminum Planarization Process
Author(s): S. Chen; E. Ong
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Paper Abstract

An excimer laser-based system for planarization of aluminum alloys has been developed. The patented planarization process utilizes a 308 nm XeC1 laser to melt and reflow the aluminum film after metal deposition. Contacts and vias of submicron geometry are filled after laser melting without thermal degradation of the underlying structure. The effect of laser fluence on the planarization process as well as the effect of the contact pattern, contact profile and barrier metal to the planarization process are discussed. Insufficient laser energy causes grain boundary separation and metal cracking as a result of grain boundary scattering and preferential melting of Al at the grain boundary. A threshold energy of greater than 3.0 J/cm2 at a substrate temperature of 4000C is required to completely melt flow aluminum in the entire laser spot without grain boundary separation. Finally, a high throughput Al planarization process has been developed on the XMR Model 7100 planarization system.

Paper Details

Date Published: 23 February 1990
PDF: 13 pages
Proc. SPIE 1190, Laser/Optical Processing of Electronic Materials, (23 February 1990); doi: 10.1117/12.963994
Show Author Affiliations
S. Chen, Xmr Inc. (United States)
E. Ong, Xmr Inc. (United States)


Published in SPIE Proceedings Vol. 1190:
Laser/Optical Processing of Electronic Materials
Jagdish Narayan, Editor(s)

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