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Proceedings Paper

Selective Laser Epitaxy Of GaAs On GaAs Substrates
Author(s): N. A. El-Masry; S. A. Hussien
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Paper Abstract

Selective epitaxy by direct writing of thin films GaAs using laser chemical vapor deposition on GaAs substrates has been achieved. Careful control of the deposition parameters for the epitaxial growth is is necessary. The deposited materials are comparable to those grown with conventional metalorganic vapor deposition techniques. We report a model on the growth conditions that can be used without the occurrence of plastic deformation in the epitaxial films. The model considers the thermal stresses that induce lattice distortion in GaAs substrates. This lattice distortion is caused by heating with laser beam which has a Gaussian power density distribution. Experimental results are compared with the model.

Paper Details

Date Published: 23 February 1990
PDF: 6 pages
Proc. SPIE 1190, Laser/Optical Processing of Electronic Materials, (23 February 1990); doi: 10.1117/12.963976
Show Author Affiliations
N. A. El-Masry, North Carolina State University (United States)
S. A. Hussien, North Carolina State University (United States)

Published in SPIE Proceedings Vol. 1190:
Laser/Optical Processing of Electronic Materials
Jagdish Narayan, Editor(s)

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