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Proceedings Paper

Excimer Laser-Assisted Deposition And Etching Of II-VI Materials
Author(s): G. L. Olson; P. D. Brewer; J. J. Zinck; J. E. Jensen; L. W. Tutt
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Paper Abstract

Results on laser-assisted deposition and surface modification of II-VI semiconductors and real-time optical diagnostics of laser-assisted reactions are reported. Excimer laser-assisted metal-organic vapor phase epitaxy has been used to deposit epitaxial layers of CdTe on GaAs(100) and HgTe and [HgCd]Te layers on CdTe/GaAs(100) at 165°C. KrF excimer laser radiation (248 nm) was used to photodissociate divinylmercury, dimethylcadmium and diethyltellurium source materials in the gas phase in a substrate-parallel irradiation geometry. Laser-induced fluorescence and multi-photon ionization spectroscopy was used to probe Te alkyl photodissociation dynamics. Single photon excitation at 248 nm results in the formation of ground state (5p3P2) Te atoms and alkyl photofragments. These results are consistent with a mechanism in which 248 nm excitation results in destabilization and cleavage of both Te-C bonds in the metal alkyl. Controllable surface layer removal and reproducible fluence-dependent composition changes were produced in CdTe thin films by KrF excimer laser irradiation. Time-of-flight mass spectrometric measurements of the velocity distribution of photoejected species are consistent with a thermal mechanism for the laser ablation process.

Paper Details

Date Published: 23 February 1990
PDF: 15 pages
Proc. SPIE 1190, Laser/Optical Processing of Electronic Materials, (23 February 1990); doi: 10.1117/12.963972
Show Author Affiliations
G. L. Olson, Hughes Research Laboratories (United States)
P. D. Brewer, Hughes Research Laboratories (United States)
J. J. Zinck, Hughes Research Laboratories (United States)
J. E. Jensen, Hughes Research Laboratories (United States)
L. W. Tutt, Hughes Research Laboratories (United States)


Published in SPIE Proceedings Vol. 1190:
Laser/Optical Processing of Electronic Materials
Jagdish Narayan, Editor(s)

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