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Proceedings Paper

Fabrication of superior oxynitride ultrathin MOS gate dielectrics for ULSI technology by reactive rapid thermal processing
Author(s): D. L. Kwong; G. Q. Lo; W. C. Ting; P. C. Li
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Paper Abstract

In this paper, superior ultrathin oxynitride gate dielectrics have been fabricated using reactive rapid thermal processing, and their chemical, structural, and electrical properties have been studied and characterized. The techniques which are employed for oxynitride gate dielectrics formation include (i) in-situ multiple RTP of both thermal oxides and low-pressure chemical-vapor-deposited oxides in reactive gas ambient, and (ii) a novel in-situ multi-step deposition/growth rapid thermal processing chemical vapor deposition for oxide/nitride/oxide (ONO) stacked layer formation.

Paper Details

Date Published: 6 April 1990
PDF: 12 pages
Proc. SPIE 1189, Rapid Isothermal Processing, (6 April 1990); doi: 10.1117/12.963970
Show Author Affiliations
D. L. Kwong, The University of Texas at Austin (United States)
G. Q. Lo, The University of Texas at Austin (United States)
W. C. Ting, The University of Texas at Austin (United States)
P. C. Li, The University of Texas at Austin (United States)

Published in SPIE Proceedings Vol. 1189:
Rapid Isothermal Processing
Rajendra Singh, Editor(s)

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