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Proceedings Paper

RTP-CVD: A Single Wafer In-Situ Multiprocessing Manufacturing Technology For ULSI
Author(s): D. L. Kwong; T. Y. Hsieh; K. H. Jung; W. Ting; S. K. Lee
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Paper Abstract

Future integrated circuits manufacturing will require a new class of equipment where large size single wafers are processed and several fabrication steps can be performed sequentially in the same equipment. This is made possible by rapidly changing the wafer temperature and processing environment, and by employing in-situ cleaning and in-situ process monitoring. The implementation of multiple in-situ processing steps within the same equipment has the potential to reduce particulate contamination by improved control of the wafer environment and increase throughput by reducing overall processing time. This should prove to be invaluable for VLSI manufacturing. Furthermore, each isolated process module can be integrated or "clustered" to match processing needs in an "application specific" fashion. In this paper, a novel single wafer multiprocessing technology, rapid thermal processing chemical vapor deposition (RTP-CVD), is described and experimental results are presented for multilayer in-situ growth and deposition of semiconductors and dielectrics.

Paper Details

Date Published: 6 April 1990
PDF: 12 pages
Proc. SPIE 1189, Rapid Isothermal Processing, (6 April 1990); doi: 10.1117/12.963964
Show Author Affiliations
D. L. Kwong, The University of Texas at Austin (United States)
T. Y. Hsieh, The University of Texas at Austin (United States)
K. H. Jung, The University of Texas at Austin (United States)
W. Ting, The University of Texas at Austin (United States)
S. K. Lee, The University of Texas at Austin (United States)


Published in SPIE Proceedings Vol. 1189:
Rapid Isothermal Processing
Rajendra Singh, Editor(s)

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