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Proceedings Paper

High Quality Si and Si-based Heterostructures And Devices Produced By Rapid Thermal Chemical Vapor Deposition (RTCVD)
Author(s): Martin L. Green; H. Temkin; D. Brasen
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Paper Abstract

CVD is a well established deposition technology that is firmly embedded in the integrated processing line. Because CVD is a production worthy technology, there are advantages in using it to deposit state-of-the-art Si and Si heterostructural films. The requirements for such films are, among others, that they be thin (<100X), epitaxial with very low defect density, and that they be grown at low temperatures. These characteristics will ensure that there will be adequate carrier transport, resulting in fast devices, that the films will not significantly interdiffuse, and that metastable structures will be preserved.

Paper Details

Date Published: 6 April 1990
PDF: 3 pages
Proc. SPIE 1189, Rapid Isothermal Processing, (6 April 1990); doi: 10.1117/12.963963
Show Author Affiliations
Martin L. Green, AT&T Bell Laboratories (United States)
H. Temkin, AT&T Bell Laboratories (United States)
D. Brasen, AT&T Bell Laboratories (United States)

Published in SPIE Proceedings Vol. 1189:
Rapid Isothermal Processing
Rajendra Singh, Editor(s)

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