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Proceedings Paper

Temperature Non-Uniformities During Rapid Thermal Processing Of Patterned Wafers
Author(s): Peter Vandenabeele; Karen Maex
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Paper Abstract

During rapid thermal processing, temperature non-uniformities are created due to patterned layers on the wafers. A theoretical calculation of this non-uniformity is presented. Results are in good agreement with previously reported experimental results. The influence of the RTP-system design, concerning lamp-system, window-type and chamber reflectivity is studied. Also, the influence of pattern size and steady-state temperature is discussed. For the technological important case of Si02 patterns on Si, specific examples are calculated. As a conclusion it is shown that when the patterns are on the front-side, heating of the wafer should be restricted to the back-side of the wafer, while the front-side of the wafer should face a highly-reflecting chamber.

Paper Details

Date Published: 6 April 1990
PDF: 17 pages
Proc. SPIE 1189, Rapid Isothermal Processing, (6 April 1990); doi: 10.1117/12.963962
Show Author Affiliations
Peter Vandenabeele, Interuniversity Micro-electronics Center (IMEC) (Belgium)
Karen Maex, Interuniversity Micro-electronics Center (IMEC) (Belgium)

Published in SPIE Proceedings Vol. 1189:
Rapid Isothermal Processing
Rajendra Singh, Editor(s)

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