Share Email Print
cover

Proceedings Paper

Temperature Non-Uniformities During Rapid Thermal Processing Of Patterned Wafers
Author(s): Peter Vandenabeele; Karen Maex
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

During rapid thermal processing, temperature non-uniformities are created due to patterned layers on the wafers. A theoretical calculation of this non-uniformity is presented. Results are in good agreement with previously reported experimental results. The influence of the RTP-system design, concerning lamp-system, window-type and chamber reflectivity is studied. Also, the influence of pattern size and steady-state temperature is discussed. For the technological important case of Si02 patterns on Si, specific examples are calculated. As a conclusion it is shown that when the patterns are on the front-side, heating of the wafer should be restricted to the back-side of the wafer, while the front-side of the wafer should face a highly-reflecting chamber.

Paper Details

Date Published: 6 April 1990
PDF: 17 pages
Proc. SPIE 1189, Rapid Isothermal Processing, (6 April 1990); doi: 10.1117/12.963962
Show Author Affiliations
Peter Vandenabeele, Interuniversity Micro-electronics Center (IMEC) (Belgium)
Karen Maex, Interuniversity Micro-electronics Center (IMEC) (Belgium)


Published in SPIE Proceedings Vol. 1189:
Rapid Isothermal Processing
Rajendra Singh, Editor(s)

© SPIE. Terms of Use
Back to Top