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Proceedings Paper

Effect Of Silicon Emissivity On Temperature Measurement And Control In Rapid Thermal Processing
Author(s): John L. Crowley; Jimmy C. Liao; Jeffrey C. Gelpey
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Paper Abstract

The effective emissivity of silicon varies with both temperature and the backside roughness of a wafer. Both of these variations need to be accounted for in the calibration of infrared optical pyrometers used in rapid thermal processing. A fully integrated hardware and software approach is described which calibrates the optical pyrometer over a temperature range of 350°C to 1275°C and provides for recalibration due to wafer to wafer variations in effective emissivity based on room temperature optical characterization of wafer backsides.

Paper Details

Date Published: 6 April 1990
PDF: 8 pages
Proc. SPIE 1189, Rapid Isothermal Processing, (6 April 1990); doi: 10.1117/12.963959
Show Author Affiliations
John L. Crowley, Peak Systems, Inc. (United States)
Jimmy C. Liao, Peak Systems, Inc. (United States)
Jeffrey C. Gelpey, Peak Systems, Inc. (United States)

Published in SPIE Proceedings Vol. 1189:
Rapid Isothermal Processing
Rajendra Singh, Editor(s)

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