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Proceedings Paper

Thermal And Stress Analysis Of Semiconductor Wafers In A Rapid Thermal Processing Oven
Author(s): H. A. Lord
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Paper Abstract

This paper describes studies of heat transfer in a rapid thermal processing-type oven used for several semiconductor wafer processes. These processes include 1) rapid thermal annealing, 2) thermal gradient zone melting, and 3) lateral epitaxial growth over oxide. The heat transfer studies include the measurement of convective heat transfer in a similar apparatus, and the development of a numerical model that incorporates radiative and convective heat transfer. Thermal stresses that are induced in silicon wafers are calculated and compared to the yield stress of silicon at the appropriate temperature and strain rate. Some methods of improving the temperature uniformity and reducing thermal stresses in the wafers are discussed.

Paper Details

Date Published: 6 April 1990
PDF: 14 pages
Proc. SPIE 1189, Rapid Isothermal Processing, (6 April 1990); doi: 10.1117/12.963957
Show Author Affiliations
H. A. Lord, AT&T Bell Laboratories Engineering Research Center (United States)

Published in SPIE Proceedings Vol. 1189:
Rapid Isothermal Processing
Rajendra Singh, Editor(s)

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