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Proceedings Paper

In-Situ Spectroscopic Ellipsometry Investigation Of Ion Beam Damage: A Kinetic Study
Author(s): J. W. Andrews; Y. Z. Hu; E. A. Irene
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Paper Abstract

An in-situ spectroscopic ellipsometer system was used to monitor damage and film formation occurring on the surface of silicon wafers during 1200 eV argon ion etching. Ellipsometric data were taken on two kinds of samples, one kind had only a native oxide and the other had a thermally grown oxide. Interpretation of ellipsometric spectra was carried out using derived optical models. The models reflect the state of the sample and allow quantification of the damage kinetics occurring at the substrate surface. Results from these experiments illustrate not only substrate damage formation, but also surface interface changes.

Paper Details

Date Published: 15 February 1990
PDF: 12 pages
Proc. SPIE 1188, Multichamber and In-Situ Processing of Electronic Materials, (15 February 1990); doi: 10.1117/12.963950
Show Author Affiliations
J. W. Andrews, University of North Carolina-Chapel Hill (United States)
Y. Z. Hu, University of North Carolina-Chapel Hill (United States)
E. A. Irene, North Carolina State University (United States)

Published in SPIE Proceedings Vol. 1188:
Multichamber and In-Situ Processing of Electronic Materials
Robert S. Freund, Editor(s)

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