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Proceedings Paper

Formation Of Silicon-Based Heterostructures In Multichamber Integrated-Processing Thin-Film Deposition Systems
Author(s): G. Lucovsky; S. S. Kim; D. V. Tsu; G. N. Parsons; J. T. Fitch
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Paper Abstract

This paper describes the formation of heterostructure devices using multichamber, integrated-processing thin-film deposition systems with UHV-compatible inter-chamber transfer. We describe the application of remote plasma-enhanced chemical-vapor deposition (Remote PECVD) for deposition of semiconducting and dielectric thin films in representative device structures. Special attention is directed to: i) deposition conditions necessary for control of thin-film and interface chemistry; and ii) post-deposition-annealing for the stabilization of physical and electronic properties of the heterostructures, including the interfaces between the constituent layers.

Paper Details

Date Published: 15 February 1990
PDF: 12 pages
Proc. SPIE 1188, Multichamber and In-Situ Processing of Electronic Materials, (15 February 1990); doi: 10.1117/12.963948
Show Author Affiliations
G. Lucovsky, North Carolina State University (United States)
S. S. Kim, North Carolina State University (United States)
D. V. Tsu, North Carolina State University (United States)
G. N. Parsons, North Carolina State University (United States)
J. T. Fitch, North Carolina State University (United States)


Published in SPIE Proceedings Vol. 1188:
Multichamber and In-Situ Processing of Electronic Materials
Robert S. Freund, Editor(s)

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