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Proceedings Paper

Electron Beam Excited GaAs Maskless Etching Using C12 Nozzle Installed FIB/EB Combined System
Author(s): Norikazu Takado; Yuichi Ide; Kiyoshi Asakawa
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Paper Abstract

We have developed a new fine-beam assisted GaAs maskless etching system capable of nanofabrication; a focused ion beam (FIB) and electron beam (EB) combined etching system with a reactive gas nozzle. In this FIB/EB combined system, EB excited GaAs etching was successfully performed by irradiating Cl2 gas on a temperature-controlled substrate. 5KeV EB was raster-scanned in a 100pm X 20pm rectangular pattern on a GaAs surface. With special care to remove the native oxide layer, spatially selective etching was also confirmed on a cleaned GaAs surface by controlling the Cl2 pressure.

Paper Details

Date Published: 15 February 1990
PDF: 6 pages
Proc. SPIE 1188, Multichamber and In-Situ Processing of Electronic Materials, (15 February 1990); doi: 10.1117/12.963947
Show Author Affiliations
Norikazu Takado, NEC Corporation (Japan)
Yuichi Ide, NEC Corporation (Japan)
Kiyoshi Asakawa, NEC Corporation (Japan)

Published in SPIE Proceedings Vol. 1188:
Multichamber and In-Situ Processing of Electronic Materials
Robert S. Freund, Editor(s)

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