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Proceedings Paper

Contamination Of Remote Plasma Processes Upon Addition Of Hydrogen As A Downstream Reagent Gas
Author(s): R. A. Rudder; S. V. Hattangady; J. B. Posthill; G. C. Hudson; M. J. Mantini; R. J. Markunas
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Paper Abstract

The flexibility of the remote plasma process qualifies it as a tool for multiple step processing. Cross-contamination of remote plasma processes via interactions of reactant gasses with the chamber wall deposits has been observed when hydrogen has been introduced as a downstream reagent gas. This has been observed for both substrate cleaning prior to epitaxy and during epitaxy. With proper precautions and chamber wall conditioning, the contamination problem can he eliminated. Thus, integration of multiple remote plasma processing steps into a single chamber is possible.

Paper Details

Date Published: 15 February 1990
PDF: 9 pages
Proc. SPIE 1188, Multichamber and In-Situ Processing of Electronic Materials, (15 February 1990); doi: 10.1117/12.963946
Show Author Affiliations
R. A. Rudder, Research Triangle Institute (United States)
S. V. Hattangady, Research Triangle Institute (United States)
J. B. Posthill, Research Triangle Institute (United States)
G. C. Hudson, Research Triangle Institute (United States)
M. J. Mantini, Research Triangle Institute (United States)
R. J. Markunas, Research Triangle Institute (United States)

Published in SPIE Proceedings Vol. 1188:
Multichamber and In-Situ Processing of Electronic Materials
Robert S. Freund, Editor(s)

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