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Proceedings Paper

In Situ Planarization Of Dielectric Surfaces Using Boron Oxide
Author(s): Jeffrey Marks; Kam Law; David Wang
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Paper Abstract

A new integrated in situ approach to deposition and planarization of dielectrics is presented. This process uses a multi chamber deposition and etch system. Using plasma enhanced deposition a sacrificial layer or boron oxide is deposited over the dielectric material. Boron oxide is observed to flow as deposited resulting in a planarized surface. After deposition the wafer is transferred under vacuum to the etch chamber where the boron oxide is removed with a 1:1 dielectric to boron oxide etch. This results in a planarized dielectric surface. Effective planarization of 25 micron wide spacings can be achieved using this process.

Paper Details

Date Published: 15 February 1990
PDF: 6 pages
Proc. SPIE 1188, Multichamber and In-Situ Processing of Electronic Materials, (15 February 1990); doi: 10.1117/12.963940
Show Author Affiliations
Jeffrey Marks, Applied Materials (United States)
Kam Law, Applied Materials (United States)
David Wang, Applied Materials (United States)


Published in SPIE Proceedings Vol. 1188:
Multichamber and In-Situ Processing of Electronic Materials
Robert S. Freund, Editor(s)

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