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Proceedings Paper

Effects Of Multichamber Processing On Reliability Of Submicron Vias
Author(s): Takafumi Tokunaga; Nobuo Owada
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Paper Abstract

This paper describes effects of spin-on-glass (SOG) planarization layer etchback process on reliability of submicron vias for multilevel metalization. Resistance values of double-level metal via chains containing 4,000-200,000 vias in the 0.8-2.0 um size range have been measured. Mass spectra for outgas from SOG films have been studied in more detail. The SOG etchback process and the subsequent P-SiO layer deposition process have been executed in a multichamber CVD system. The multichamber processing can reduce the emission of outgas which degrades via yield and reliability.

Paper Details

Date Published: 15 February 1990
PDF: 8 pages
Proc. SPIE 1188, Multichamber and In-Situ Processing of Electronic Materials, (15 February 1990); doi: 10.1117/12.963939
Show Author Affiliations
Takafumi Tokunaga, Hitachi Ltd. (Japan)
Nobuo Owada, Hitachi Ltd. (Japan)


Published in SPIE Proceedings Vol. 1188:
Multichamber and In-Situ Processing of Electronic Materials
Robert S. Freund, Editor(s)

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