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Proceedings Paper

A Multichamber Integrated-Processing UHV System For The Formation Of Silicon Heterostructures On Three-Inch Wafers
Author(s): J. T. Fitch; J. J. Sumakeris; G. Lucovsky
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Paper Abstract

This paper describes the design and construction of a multichamber integrated dielectric processing system. We describe a methodology for managing the design process of complex integrated-processing systems which includes model building and computer aided design. The advantages of a flexible modular approach to integrated processing are discussed. The finished system has three processing and analysis modules networked by a central server with capabilities for (i) remote plasma enhanced chemical vapor deposition (PECVD) of dielectric films, (ii) downstream cleaning of semiconductor surfaces, and (iii) in-situ materials characterization by Auger electron spectroscopy (AES) and reverse view low energy electron diffraction (LEED). With this integrated processing system we have the capability of depositing and analyzing Si-based heterostructures which can be fabricated to include any combination of silicon oxide; silicon nitride; silicon oxynitride; and amorphous, microcrystalline, or polycrystalline silicon layers.

Paper Details

Date Published: 15 February 1990
PDF: 13 pages
Proc. SPIE 1188, Multichamber and In-Situ Processing of Electronic Materials, (15 February 1990); doi: 10.1117/12.963937
Show Author Affiliations
J. T. Fitch, North Carolina State University (United States)
J. J. Sumakeris, North Carolina State University (United States)
G. Lucovsky, North Carolina State University (United States)


Published in SPIE Proceedings Vol. 1188:
Multichamber and In-Situ Processing of Electronic Materials
Robert S. Freund, Editor(s)

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