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Proceedings Paper

Analysis Of Nonlinear Optical Phenomena: Perspective Of in situ Monitoring Method Of The Semiconductor-Film Crystal-Structure
Author(s): V. Balaniuk; V. Krasnov; N. Kul'chitzkii; S. Musher; V. Proc'; A. Rubenchik; V. Ryabchenko; M. Stupak; S. Strutz; V. Khryapov
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Paper Abstract

In the process of the molecular beam epitaxy (MBE) the electron diffraction is traditionally used for nondestructive crystal-structure monitoring. We have shown that similar results could be obtained by detection of the second harmonic of the laser light generated in a film (SHG-method). Laser-assisted methods are very attractive for diagnostics in high-vacuum systems. It is easy to input and to output radiation via small diameter windows. It is also easy to realize distant continuous local monitoring during the growth process.

Paper Details

Date Published: 5 February 1990
PDF: 3 pages
Proc. SPIE 1186, Surface and Interface Analysis of Microelectronic Materials Processing and Growth, (5 February 1990); doi: 10.1117/12.963932
Show Author Affiliations
V. Balaniuk, USSR Academy of Sciences (Germany)
V. Krasnov, USSR Academy of Sciences (Germany)
N. Kul'chitzkii, USSR Academy of Sciences (Germany)
S. Musher, USSR Academy of Sciences (Germany)
V. Proc', USSR Academy of Sciences (Germany)
A. Rubenchik, USSR Academy of Sciences (Germany)
V. Ryabchenko, USSR Academy of Sciences (Germany)
M. Stupak, USSR Academy of Sciences (Germany)
S. Strutz, USSR Academy of Sciences (Germany)
V. Khryapov, USSR Academy of Sciences (Germany)


Published in SPIE Proceedings Vol. 1186:
Surface and Interface Analysis of Microelectronic Materials Processing and Growth
Leonard J. Brillson; Fred H. Pollak, Editor(s)

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