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Proceedings Paper

In-situ Observation On Electron Beam Induced Chemical Vapor Deposition By Transmission Electron Microscopy
Author(s): Toshinari Ichihashi; Shinji Matsui
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Paper Abstract

Electron beam induced chemical vapor deposition of W and Si has been studied in a transmission electron microscope. WF6 and SiH2C12 were used as gas sources. Si and W clusters were initially formed. The W clusters, about 3nm in size, were β-W crystal, while the Si clusters were amorphous. The larger W clusters deposited on carbon films, about 10nm in size, were δ-W crystal. Deposition rates can be directly calcula,ted, by using this techniques. For example, a 120-kV electron beam at 100A/cm2 current density will deposit W at 5nm/min at 5x10-7Torr, and Si at 2nm/min at 5x10-5Torr. A W rod, 15nm in diameter, has been deposited using a 3-nm-dim focused electron beam.

Paper Details

Date Published: 5 February 1990
PDF: 9 pages
Proc. SPIE 1186, Surface and Interface Analysis of Microelectronic Materials Processing and Growth, (5 February 1990); doi: 10.1117/12.963928
Show Author Affiliations
Toshinari Ichihashi, NEC Corporation (United States)
Shinji Matsui, NEC Corporation (United States)

Published in SPIE Proceedings Vol. 1186:
Surface and Interface Analysis of Microelectronic Materials Processing and Growth
Leonard J. Brillson; Fred H. Pollak, Editor(s)

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