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Proceedings Paper

Investigation By Transmission Electron Microscopy Of The Al-SiO2 Thin-Film Reaction Induced By in-situ Rapid Thermal Processing
Author(s): V. Baranauskas
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Paper Abstract

Self-supporting bi-layer structures of Al/SiO2 thin-films has been investigated by a combination "in-situ" of Rapid Thermal Processing (RTP) and Transmission Electron Microscopy (TEM). We observed that the Al/Si02 mismatch results in high tensile stress that contribute to slower the kinectics of the Al nucleation. Practically there is no change of the Al morphology in the annealed samples even at temperatures up to 720 K. A metastable Al silicide was observed at temperatures around 370 K.

Paper Details

Date Published: 5 February 1990
PDF: 4 pages
Proc. SPIE 1186, Surface and Interface Analysis of Microelectronic Materials Processing and Growth, (5 February 1990); doi: 10.1117/12.963927
Show Author Affiliations
V. Baranauskas, State University of Campinas (Brazil)


Published in SPIE Proceedings Vol. 1186:
Surface and Interface Analysis of Microelectronic Materials Processing and Growth
Leonard J. Brillson; Fred H. Pollak, Editor(s)

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