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Proceedings Paper

Observations Of Epitaxial Growth Using Scanning Tunneling Microscopy
Author(s): D. K. Biegelsen; R. D. Bringans; L. E. Swartz
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Paper Abstract

An ultrahigh vacuum system has been built which allows molecular beam epitaxial deposition of compound semiconductors and scanning tunneling microscopy (STM) imaging, as well as angle-resolved photoemission, X-ray photoemission and Auger electron spectroscopies, and low energy electron diffraction. Samples can be moved from station to station for individual operations. We demonstrate the utility of the system with examples of homoepitaxial GaAs(100) and GaAs(111) surfaces, and heteroepitaxial GaAs/Si(100). We also compare the STM results with complementary measurements from the literature. Finally, we comment on the utility of such systems.

Paper Details

Date Published: 5 February 1990
PDF: 8 pages
Proc. SPIE 1186, Surface and Interface Analysis of Microelectronic Materials Processing and Growth, (5 February 1990); doi: 10.1117/12.963925
Show Author Affiliations
D. K. Biegelsen, Xerox Palo Alto Research Center (United States)
R. D. Bringans, Xerox Palo Alto Research Center (United States)
L. E. Swartz, Xerox Palo Alto Research Center (United States)


Published in SPIE Proceedings Vol. 1186:
Surface and Interface Analysis of Microelectronic Materials Processing and Growth
Leonard J. Brillson; Fred H. Pollak, Editor(s)

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