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Proceedings Paper

Photoelectrochemically Induced Copper Deposition On P-Silicon Electrodes From CuCN Solutions
Author(s): N. T. Silva; G. P. Thim; A. W. Mol; V. Baranauskas
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Paper Abstract

We have studied the mechanisms of the copper metallization on P-silicon wafers immersed in CuCN solutions, using photoelectrochemical measurements and optical/electron microscopy. In this process the electroplating is enhanced by the minority carries in illuminated areas of the silicon. cathode. The photo-selective deposition with high resolution have been obtained only on low doped P-silicon. The kinectics of the film growth is strongly dependent on the film thickness, and two mechanisms have been identified. Patterns of resolution of ~4 microns can be realized only with thickness bellow ~20 nm. Further investigation is needed for prevent the oxidation of the as-deposited film.

Paper Details

Date Published: 5 February 1990
PDF: 5 pages
Proc. SPIE 1186, Surface and Interface Analysis of Microelectronic Materials Processing and Growth, (5 February 1990); doi: 10.1117/12.963924
Show Author Affiliations
N. T. Silva, State University of Campinas (Brazil)
G. P. Thim, State University of Campinas (Brazil)
A. W. Mol, State University of Campinas (Brazil)
V. Baranauskas, State University of Campinas (Brazil)

Published in SPIE Proceedings Vol. 1186:
Surface and Interface Analysis of Microelectronic Materials Processing and Growth
Leonard J. Brillson; Fred H. Pollak, Editor(s)

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