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Proceedings Paper

Photoreflectance Study Of Strain At Si/SiO2 Interfaces Prepared By Thermal Oxidation Of Silicon
Author(s): X. Yin; Fred H. Pollak; J. T. Fitch; C. H. Bjorkman; G. Lucovsky
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Paper Abstract

We have used the contactless electromodulation technique of photoreflectance (PR) to investigate the strain in the near surface region (-100 R) of Si in thermally prepared (~100Å) Si/Si02 interfaces. We have tracked the position of the E1 optical feature (Λ3 - Λl transitions) relative to its position in a reference Si wafer (not intentionally oxided). From the observed red-shifts we can deduce both the magnitude and sign (tensile) of the strain. These observations are consistent with the compressive stress in the SiO, at the Si/Si02 interface as evaluated previously using it transmission, ellipsometry and laser-beam deflection studies.

Paper Details

Date Published: 5 February 1990
PDF: 9 pages
Proc. SPIE 1186, Surface and Interface Analysis of Microelectronic Materials Processing and Growth, (5 February 1990); doi: 10.1117/12.963923
Show Author Affiliations
X. Yin, Brooklyn College of CUNY (United States)
Fred H. Pollak, Brooklyn College of CUNY (United States)
J. T. Fitch, North Carolina State University (United States)
C. H. Bjorkman, North Carolina State University (United States)
G. Lucovsky, North Carolina State University (United States)


Published in SPIE Proceedings Vol. 1186:
Surface and Interface Analysis of Microelectronic Materials Processing and Growth
Leonard J. Brillson; Fred H. Pollak, Editor(s)

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