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Proceedings Paper

Reflectance-difference spectroscopy of GaAs crystal growth by OMCVD
Author(s): E. Colas; D. E. Aspnes; R. Bhat; A. A. Studna; M. A. Koza; V. G. Keramidas
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Paper Abstract

This paper summarizes results of our investigations of growth on (001) and (110) GaAs by atmospheric-pressure organometallic chemical vapor deposition (OMCVD). We follow evolutions of surface species to a sensitivity of 0.01 monolayer (ML) on a time scale of 0.1 s under alternating flows of trimethylgallium (TMG) and arsine (AsH3) as functions of partial pressure, sample temperature, and surface orienta-tion. The reaction of TMG with an AsH3-saturated (001) surface is rate-limited by com-petition between desorption and decomposition of TMG molecules chemisorbed to surface lattice sites via an excluded-volume mechanism, while the reaction of AsH3 with the TMG-saturated (001) surface is essentially instantaneous. In contrast, TMG reacts essentially instantaneously with the AsH3 -saturated (110) surface while the AsH3 reaction with the TMG-saturated (110) surface is the rate-limiting step. However, the latter rate is not intrinsic to the AsH3-surface reaction but appears to be determined by desorption of adsorbed species that block active sites.

Paper Details

Date Published: 5 February 1990
PDF: 14 pages
Proc. SPIE 1186, Surface and Interface Analysis of Microelectronic Materials Processing and Growth, (5 February 1990); doi: 10.1117/12.963921
Show Author Affiliations
E. Colas, Bellcore (United States)
D. E. Aspnes, Bellcore (United States)
R. Bhat, Bellcore (United States)
A. A. Studna, Bellcore (United States)
M. A. Koza, Bellcore (United States)
V. G. Keramidas, Bellcore (United States)

Published in SPIE Proceedings Vol. 1186:
Surface and Interface Analysis of Microelectronic Materials Processing and Growth
Leonard J. Brillson; Fred H. Pollak, Editor(s)

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